Translation of "Wet etch" in German

The wet-chemical etch is carried out at room temperature.

However, the lateral component of a dry etch is low in relation to the lateral component of an anisotropic wet etch.

According to the customary method, the cleaning operation for removing polymer is carried out as a wet-chemical etch, in which the semiconductor wafer is immersed in a chemical bath.

However, the wet film, which accumulates on the wafer surface during the wet-chemical etch leads to undesirable oxidation of the metal tracks in the region of the contact opening.

Doped oxide layer 12 is then etched by a wet etch technique, for example, in hydrofluoric acid buffered with ammonium fluoride.

While the resists for the shortwave UV region are sufficiently stable to wet etch processing, their stability to fluorine- and chlorine-containing plasmas, which may additionally contain oxygen, as used for etching in semiconductor element fabrication, is limited and in need of improvement.

In prior art methods, the cadmium telluride layer then undergoes a wet chemical etch.

In another refinement, a partial lateral etching of the electrode during the dry etch and in particular during the wet etch is compensated for by a reserve dimension of a mask which is used in a lithography method for patterning the electrode.

In particular, in the capacitor arrangements 700 and 800 measures are also taken to avoid damage at the edge of the dielectric, for example the use of a projection and/or the combination of a dry etch and a wet etch or wet cleaning.

Deep patterns can be etched into silicon inexpensively using established wet etch techniques such as KOH, TMAH.

This ELP300 Excimer laser platform is designed for high volume manufacturing and processing of wafer sizes between 200 and 300mm, employing Excimer laser technology to directly create microstructures in lieu of traditional photolithography and wet etch approaches.

These positive resists are furthermore usable for alkaline wet etching processes.

Also, wet-chemical etchings are used for the reetching of the contact layers.

Such a wet-chemical, isotropic etching can be easily controlled over the etching duration.

Wet chemical etching could also be used.

These positive resists are furthermore unable for alkaline wet etching processes.

This can take place by wet chemical etching.

The electrodes are structured by means of lithographical processes in combination with wet or dry etching steps.

This advantageously protects the substructure oxide 105 during the subsequent wet etching processes.

The substructure stop layer 105 is then removed by wet chemical etching, for example.

Wet etching is likewise useful during the removal of the sacrificial material.

Other etching processes, such as isotropic wet etching or dry etching, can also be used.

In addition, this wet-chemical etching process is very complicated, owing to the numerous rinsing processes required.

The etching process for manufacturing the diaphragm can be executed as a wet or dry etching process.

With an alkali etch solution, a wet chemical etching method is also possible.

The process is distinguished by inexpensive process steps, substantially wet-chemical etching steps.

In the following wet-chemical etching step, the cantilever 117 is thinned to the desired thickness.

This first thinning process can also be carried out by wet chemical etching.

The place-saver 61 of polysilicon is etched out by wet chemical etching.

For contact opening, only the N-SIPOS layer is removed by wet chemical etching.

This is not possible in traditional, wet-chemical etching methods because of the inadequate selectivity.

If the boron phosphorous silicate glass is wet-etched in the process, a very large lateral etching results.

The wet chemical etching is, for instance, performed with choline (4%).

The trenches are then etched either by wet chemical etching techniques or by reactive ion etching.

Then the BSG layer 3 is removed by wet etching using buffered hydrofluoric acid.